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Aspenâ„¢ III
The Aspen III delivers production proven and cost-effective strip and etch
solutions through Mattson Technology’s proprietary Faraday shield inductively
coupled plasma (ICP) technology. Aspen III is a 200 mm / 300 mm bridge tool and
its exceptional platform design supports the technical challenges of special wafer handling including
warped wafers and translucent wafers. The unique process chamber architecture accommodates multiple
technology nodes requirements of the industry’s most demanding device manufacturers.
Product Features:
Platform
200 mm / 300 mm bridge tool capability
Glass / quartz / translucent wafer handling
Support warped wafer > 5 mm
Single or dual process chamber options
High speed robot and simultaneous multi-wafer handling with high-throughput
Vacuum loadlock isolates process chambers to minimize defects
More than 500 systems installed across a wide range of device manufacturers
ICP / Strip Process Chamber
Ndevice damage via soft plasma from proprietary Faraday shield ICP source
Process flexibility
Fluorine / reducing chemistry
Wide temperature range (100°C to 300°C)
Independent head control
Lower cost of consumables
Process
Bulk PR Strip
Implanted PR Removal
Surface Treatment / Descum
Polyimide Rework
LiteEtch Process Chamber
High concentration fluorine
chemistry (> 5%) isotropic etch
for contact clean application
Fluorine resistance chamber
design
eHighlands / Etch and Strip Process
Chamber
Bias capability delivers higher
etch rate with minimum damage
Low Temperature (10°C t80°C) with TCU
Low Pressure (5 mT t300 mT)
FEOL / BEOL Process
PR Strip / Residue Removal
SiN / SiC Barrier Etch
Resist / BARC Etch Back
Wafer Level Packaging Process
Surface Treatment / Descum
3D PR Strip
Applications:
Memory
Image Sensor
MEMS / Sensors
Wafer Level Packaging
Optoelectronics
Analog / Bipolar / Mixed Signal
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