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Aspenâ„¢ III

The Aspen III delivers production proven and cost-effective strip and etch

solutions through Mattson Technology’s proprietary Faraday shield inductively

coupled plasma (ICP) technology. Aspen III is a 200 mm / 300 mm bridge tool and

its exceptional platform design supports the technical challenges of special wafer handling including

warped wafers and translucent wafers. The unique process chamber architecture accommodates multiple

technology nodes requirements of the industry’s most demanding device manufacturers.

Product Features:

Platform

200 mm / 300 mm bridge tool capability

Glass / quartz / translucent wafer handling

Support warped wafer > 5 mm

Single or dual process chamber options

High speed robot and simultaneous multi-wafer handling with high-throughput

Vacuum loadlock isolates process chambers to minimize defects

More than 500 systems installed across a wide range of device manufacturers

ICP / Strip Process Chamber

Ndevice damage via soft plasma from proprietary Faraday shield ICP source

Process flexibility

Fluorine / reducing chemistry

Wide temperature range (100°C to 300°C)

Independent head control

Lower cost of consumables

Process

Bulk PR Strip

Implanted PR Removal

Surface Treatment / Descum

Polyimide Rework

LiteEtch Process Chamber

High concentration fluorine

chemistry (> 5%) isotropic etch

for contact clean application

Fluorine resistance chamber

design

eHighlands / Etch and Strip Process

Chamber

Bias capability delivers higher

etch rate with minimum damage

Low Temperature (10°C t80°C) with TCU

Low Pressure (5 mT t300 mT)

FEOL / BEOL Process

PR Strip / Residue Removal

SiN / SiC Barrier Etch

Resist / BARC Etch Back

Wafer Level Packaging Process

Surface Treatment / Descum

3D PR Strip

Applications:

Memory

Image Sensor

MEMS / Sensors

Wafer Level Packaging

Optoelectronics

Analog / Bipolar / Mixed Signal


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